1994. 5. 11 1/1 semiconductor technical data KTC9016 epitaxial planar npn transistor revision no : 0 high frequency low noise amplifier application. hf, vhf band amplifier application. features small reverse transfer capacitance : c re =0.65pf(typ.). low noise figure :nf=2.2db(typ.) at f=100mhz. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 1 ) note) h fe classification e:40 59, f:54 80, g:72 108, h:97 146, i:130 198 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =40v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =5v, i c =1ma 40 - 198 reverse transfer capacitance c re v ce =6v, f=1mhz, i e =0 - - 1.0 pf transition frequency f t v ce =6v, i c =1ma, f=200mhz 260 - - mhz collector-base time constant c c rbb? v ce =6v, i e =-1ma, f=30mhz - - 30 ps noise figure nf v ce =6v, i e =-1ma, f=100mhz - 2.2 4.0 db power gain g pe 15 - - db characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 4 v collector current i c 20 ma emitter current i e -20 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1
|
